Abstract
In this paper, we have discussed the fundamental properties of the germanium oxides formed by thermal oxidation and plasma post-oxidation as interfacial layers for Ge MOSFETs. The germanium oxides form high-quality Ge MOS interface with interface trap density of around 1011 cm-2eV-1. High-mobility Ge n-MOSFETs and p-MOSFETs have successfully been demonstrated even with EOT of less than 0.8 nm, exhibiting that the germanium oxides are the most promising interfacial layers for future Ge CMOS.
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