Abstract
Metallorganic-decomposed CeO 2 has been successfully spin-coated on an n-type GaN substrate. The effect of postdeposition annealing temperature (400-1000°C) on the electrical characteristics of a CeO 2 /GaN-based metal oxide semiconductor (MOS) structure has been investigated. It has been identified that the sample annealed at the highest temperature demonstrated the highest dielectric breakdown field. The parameters that contributed to this observation have been discussed in detail in this article.
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