Abstract
This paper investigates the electrical characteristics at low temperatures through C–V, I–V and conductance measurements to understand the interface behavior of HfO2 and p-type GaAs bulk substrate. Room temperature interface state density, D it , estimated for as-deposited Ti–Au/HfO2/GaAs capacitors was found to be 3.68 × 1011 cm−2 eV−1. Low temperature measurement suggests that only fast interface states contribute to the conduction process. When the characteristics of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 and 8.98 fF/μm2 for Be–Au/HfO2/GaAs and Ti–Au/HfO2/GaAs, respectively at 1 MHz.
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