Morphology improvements in CdSe thin films: A realization through mechanical agitation and incubation period

Abstract

Albeit neglected, the subsidiary deposition parameters of mechanical agitation and incubation period affect the growth mechanism and quality of thin films. Therefore, the secondary parameters of mechanical agitation and incubation period were studied systematically for cadmium selenide thin films. As-grown CdSe thin films revealed independence of crystal structure on the secondary growth parameters. A detailed study on surface morphology leads to an observation of globular crystallites formation. The observed microstructural details were supported by atomic force microscopy. Advanced techniques based on Sobel transformation, angular spectrum, and electrostatic force microscopy were also employed in assessing the surface topographic details. The as-deposited CdSe thin films showed semiconductor nature with a direct bandgap of ≈1.75 eV. The d.c. electrical conductivity ≈10−6 (Ω cm)−1 was observed. Changes in the electrical conduction and bandgap were attributed to the topographical amendments.