Abstract
An attempt is made to establish the procedure for regulating stoichiometry and hence the materials properties of the chemically deposited CdSe thin films. Reliance of the structural, morphological, optical and electrical properties on the stoichiometry was studied to support the established protocols. To upkeep the appealed modus operandi, growth mechanism of CdSe thin films is proposed. The compositional studies revealed stoichiometric adaptations harmonizing the synthesis protocols. Crystallography remained the same regardless of the variation in deposition conditions. The as-deposited CdSe thin films are polycrystalline in nature with the hexagonal (P63/mmc space group) crystal geometry. Globule shaped grains of nanosize are observed through the scanning electron microscopy. Morphological modifications coupled with the stoichiometric deviations established control over the bandgap and electrical transport characteristics. Thus, with the ambitions to set up the standards for regulating stoichiometry and consequently the physical properties, we communicate the synthesis and preliminary studies on the CdSe thin films through this paper.
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