Morphology, electrical and linear and nonlinear optical properties of Pb0.85Sn0.15Se thin film

Abstract

The ternary PbSnSe chalcogenide thin film compounds are promising materials for infrared imaging and semiconducting devices due to their large transparency in infrared regions in this study, we will look to present some physical properties of the ternary Pb0.85Sn0.15Se compound, in order to be able to use it in the optoelectronic application. A thin film of stoichiometric composition Pb0.85 Sn0.15 Se was prepared by thermal evaporation process at a vacuum pressure of 103 Pa. The X-ray and electron diffraction studies revealed that the deposited films are crystalline in nature and belong to a Cubic structure as depicted from the JCPS cards. The surface morphology of the films was examined using the scanning electron microscope. The optical transmission and reflection spectra of the deposited film have been measured in the wavelength spectral range of 200–2500 nm. Therefore, the optical band gap energy and refractive index were evaluated. The dispersion of the refractive index was adequately described using the suggested Wemple – DiDomenico single-oscillator model, whereby the corresponding dispersion parameters, high-frequency dielectric constants besides evaluating the non-linear refractive index, and nonlinear optical susceptibility were evaluated. Further analysis of the refractive index based on the Fan model was also conducted to calculate the carrier concentration to the effective mass ratio. The variation of the conductivity versus temperature was performed and present in the temperature range 293–623 K where the activation energy was calculate.