Morphology effects of self-assembled quantum dots on the energy spectrum of magneto-excitons

Abstract

In this paper we analyze the changes experienced by the energy spectra of a confined exciton in type II semiconductor quantum dots, considering the quantum dot as a possible functional part that, in the future devices, can be applied in spintronics, optoelectronics, and quantum information technologies. We studied the lowest energy states of an exciton (X) confined in type II InP/GaInP self-assembled quantum dot (SAQDs), with axial symmetry in the presence of a uniformly applied magnetic field in the growth direction. In our model, it is considered that the electron is located within the point of InP and the hole is in the GaInP barrier. The solution of the Schrödinger equation for this system is obtained by a variational separation process of variables in the adiabatic approximation limit and within the effective mass approximation. We study the energy levels associated with the electron and the hole, and the energy of the exciton. Due to the axial symmetry of the problem the z component of the total orbital angular momentum, Lz=le+lh, is preserved and the exciton states are classified according to the values of this component. Quantum dots have a finite and variable thickness, with the purpose of analyzing the effects related to the variation of the morphology and the presence of a wet layer.