Abstract
Felted, curly, and straight β-SiC nanowires (SiCNWs) had been synthesized by chemical vapor reaction, and morphology-dependent field emission (FE) characteristics were chiefly investigated. The turn-on and threshold fields were 2.0 and 5.3 V/μm for felted nanowires, 1.5 and 3.25 V/μm for curly nanowires, and 1.0 and 2.05 V/μm for straight nanowires, respectively, suggesting that morphology played an important role in FE properties of the SiCNWs. Magnetic field shielding effect is proposed to explain the morphology-dependent FE characteristics, and it may stand as a nice referential work for researching FE properties of other wirelike materials.
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