Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

Abstract

Studies are carried out on the morphology of the surface and photovoltaic characteristics of a thinfilm Au–ZnxCd1–xS–Mo structural injection photodetector with a wide photosensitivity range in the ultraviolet and visible radiation spectral regions. The composition of ZnxCd1–xS film in the Au–ZnxCd1–xS–Mo structure with a wide photosensitivity spectrum in the ultraviolet and visible spectrum, where x on the surface varies from 0.22 to 0.24, is studied. The mechanism of current transport is investigated, and the main electrophysical parameters of the semiconducting materials are determined. The use of ZnxCd1–xS film with a variable band gap in the thin-film heterojunction solar cells, where they are used as the buffer layer, will provide an opportunity to increase the photosensitivity of the structure in the short-wave region of the radiation spectrum, increase the value of the built-in potential, short-circuit current and value of the open-circuit voltage of the structure.