Abstract
The composition and photovoltaic characteristics of Au–Zn x Cd1–x S–Mo–thin film structural injection photo detectors sensitive to narrow the ultraviolet region of the electromagnetic spectrum created and investigated. Studies of the morphology and composition of Zn x Cd1–x S films showed that in the Au–Zn x –Cd1–x S–Mo–UV structure, with a narrow photosensitivity spectrum, x = 0.6 ± 0.02. The features of current transport mechanism in the structure and the basic parameters of semiconductor material are defined. Polycrystalline Zn x Cd1–x S is a wide-band-semiconductor material may be used instead of the CdS buffer layer in various types of heterostructural solar cells. This will give an opportunity to increase the photo sensitivity of the structure in the short-wave part of the radiation spectrum, increase the built-in potential and solve the problem of open circuit voltage deficiency in the thin-film solar cells.
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