Abstract
As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a vertical LPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor) gate electrode.
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