Abstract
Theoretical basis - study of strain and temperature dependence of metal epitaxy, C. Ratsch et al atomistic simulation methods, A.F. Voter submonolayer nucleation and growth of 2D islands and multilayer mound formation during homoepitaxy, J.W. Evans and M.C. Bartelt equilibrium shape of a coherent epitaxial cluster, C. Duport et al dynamic scaling in epitaxial growth, S. Das Sarma scaling and crossovers in models for thin film growth, A Pimpinelli et al quantum effect in meta overlayers on semiconductor substrates, J.-H. Cho et al semiconductor-on-semiconductor growth - self-organized island arrays in SiGe/Si multilayers, C. Teichert et al morphological evolution of strained semiconductor films, D.E. Jesson large scale surface evolution during MBE growth - mounding, C. Orme et al growth structures of silicon homoepitaxy by chemical vapour deposition, H. Rauscher and R.J. Behm metal-on-metal growth - two-dimensional island shapes, T. Michely and G. Comsa ramified growth in metal on metal epitaxy, R.Q. Hwang morphology and energy barriers in homoepitaxial growth and coarsening - a case study for Cu(100), J.F. Wendelken et al the concept of two mobilities for growth manipulation, G. Rosenfeld et al tailoring epitaxial growth of low-dimensional magnetic heterostructures by means of surfactants, J.J. de Miguel et al cluster diffusion, coalescence and coarsening in metal(100) homoepitaxial systems, P.A. Thiel and J.W. Evans metal-on-semiconductor growth - Ag on Si-surfaces -from insulator to metal, M.H. von Hoegen et al metal on semiconductor growth at low temperatures, M.C. Tringides growing atomically flat metal films on semiconductor substrates, C.-K. Shih removal - spontaneous halogen etching of Si, J.H. Weaver and C.M. Aldao surface morphology of ion bombarded Si(001) and Ge(001) surfaces, H.J.W. Zandvliet and I.S.T. Tsong.
Published Version
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