Abstract
ZnO nanorods (NRs) have been successfully grown onto Silicon (Si) substrates. The properties of ZnO NRs have been characterized using field emission scanning microscopy, Photoluminescence, and X-ray diffraction. Results showed that the growth temperature (85, 90, 95, and 100oC) significantly affected the properties of ZnO NRs. At a temperature of 95oC, the structural and optical properties have been significantly enhanced, besides, well-aligned ZnO NRs have been obtained. With the rise of growth temperature from 85 to 95oC, the crystallite size increases (52 to 94 nm), and the near band edge emission to deep level emission ratio is enhanced. Besides, the aspect ratio for the prepared ZnO NRs has increased significantly reaching 19.42. This study emphasizes the significance of growth temperature in tunning the structural and microstructural and subsequently the physicochemical properties of ZnO NRs by fine control of the growth temperature. Moreover, a facile and cost-efficient method for fabricating ZnO nanorods for electronic applications based on silicon is presented in this study.
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