Abstract
The properties of InP grown by solid source molecular beam epitaxy have been studied concerning electron mobility in correlation with surface morphology and carrier concentration. The surface roughness and carrier concentration exhibit pronounced dependences on growth temperature and V/III flux ratio. A growth regime for a smooth surface and a high electron mobility is determined with growth temperature from 364– 390 ∘ C and V/III flux ratio from 2.4 to 3.5. A InP film with maximum electron mobility of 4.57 × 10 4 cm 2 / V s at 77 K has been achieved.
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