High electron mobility InP grown by solid source molecular beam epitaxy

Abstract

High-quality InP is grown by solid source molecular beam epitaxy using white phosphorus source in a three-zone valved cracker cell. The growth temperature, growth rate and substrate desorption process have been adjusted to optimize the structural, electrical and optical properties. The photon and carrier scattering dynamics are investigated by temperature-dependent photoluminescence and electron Hall mobility. The 5-μm-thick sample presents stronger photoluminescence, solo carrier recombination scheme and inferior impurity scattering comparing to the 1-μm-thick sample. The high electron mobility of 137000 cm2/V·s at 77 K has been achieved for the 5-μm-thick InP layer.