More progressive technology of GaSb single crystal growth

Abstract

GaSb single crystals were grown by the Czochralski method without encapsulant in an atmosphere of ionized hydrogen. It has been found that the resistivity increased by more than one order of magnitude (0.8–1.0Ω cm) and free carrier concentration decreased to the value of (1–2) × 1016 cm−3 in comparison with the crystals grown under molecular hydrogen atmosphere. A certain asymmetry in acceptor and donor passivation is assumed because the Hall concentration does not vary along the direction of crystal growth. Donors are passivated more than acceptors, which should be confirmed by increasing resistivity and decreasing mobility.