Abstract
The present Tutorial provides a description of the growth of bulk β-Ga2O3 single crystals by the Czochralski method with a focus on the critical growth aspects. In particular, it details the thermodynamics of Ga2O3 as the key factor for crystal growth along with comprehensive solutions that are essential for crystal size scale-up. Also, free carrier absorption is discussed, as it has a great impact on growth stability. The crystal growth direction and intentional doping, as important factors for crystal growth, are described as well. All of the aspects of the crystal growth are accompanied by resulting crystals, their structural quality, and basic physical properties.
Highlights
The aim of the present Tutorial is to highlight all major particularities associated with the growth of bulk β-Ga2O3 single crystals by the Czochralski method
It details the thermodynamics of Ga2O3 as the key factor for crystal growth along with comprehensive solutions that are essential for crystal size scale-up
Thermodynamic study and solutions provided hereinafter for Czochralski-grown β-Ga2O3 crystals are of a general nature and are applicable to any melt growth method, in particular, that involve a noble metal crucible scitation.org/journal/jap and any thermally unstable oxide, while the other phenomena are related to the Czochralski method with some extensions to other melt growth methods and oxides
Summary
Β-Ga2O3 is a compound known in the art for several decades as a promising oxide semiconductor. A large bandgap of 4.85 eV80 classifies β-Ga2O3 as an ultra-wide bandgap (UWBG) oxide semiconductor with many application opportunities, especially in UV optoelectronics and high-power electronics, which can be found in the above-cited review articles and books. It has a steep absorption edge in the UV band C spectral region with high transparency in the visible and near-infrared (NIR) spectral regions, the latter being affected by the free carrier concentration.[23] The refractive index varies between 1.95 and 2.1 in the whole visible spectrum with a high anisotropy just near the absorption edge in the UV region.[81]. In terms of electrical properties, β-Ga2O3 is an n-type semiconductor This is the result of the electronic band structure, where the bottom edge of the conduction band (CB) shows a high dispersion, while the top edge of the valence band (VB) is relatively flat.[80,86]. More recent theoretical considerations on the breakdown field can be found in Ref. 92
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