MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Abstract

Abstract2D transition‐metal dichalcogenides (TMDs) are considered to have high potential for application in consumer electronics. For such applications, they require low threshold, fast operation, and simple fabrication processes. Previously reported 2D TMD metal–insulator–semiconductor field‐effect transistors (MISFETs) usually suffer from high operating voltages and interfacial trap‐induced scattering as their dielectric layer reduces the applied gate voltage and introduces interfacial defects. In order to avoid such problems, 2D MoS2‐based Schottky‐gated metal–semiconductor field‐effect transistors (MESFETs) are developed. Such devices rely on the newly developed MoOx/Au gate electrode. They obtain superior transport mobility, up to 160 cm2 V−1 s−1, compared to an equivalent channel back‐gated MISFET, which only reaches 6.9 cm2 V−1 s−1. Furthermore, the back electric field is utilized to tune the on–off current, SS, and threshold voltage of the MESFET to adapt to different operation requirements. In an integrated prototype device, a MESFET‐based inverter exhibits a faster switching behavior than a mirrored inverter driven by a MISFET. This work provides a reliable strategy for high‐performance MESFET devices, which may expand the 2D material device applications into future consumer electronics.