Abstract
We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study suggests that electrons in inhomogeneous InAs could be used to experimentally explore generalized random walk phenomena, which, some studies assert, also occur naturally in the motion of animal foraging paths.
Highlights
Inhomogeneous semiconductors display distinctive electric and magnetic properties [1]
1μm y x high-μ 1μm ballistic “jumps” occur when electrons enter the high-μ islands, which may lead to anomalous diffusion
The transition from ballistic transport to anomalous diffusion should occur at the shortest scattering time t0 = (We + Wi)−1 ≈ We−1 = 4 fs
Summary
Inhomogeneous semiconductors display distinctive electric and magnetic properties [1]. We recently demonstrated how linear magnetoresistance arises from the stochastic behavior of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous InAs epilayers [2, 3]. We present Monte Carlo studies demonstrating the possibility to experimentally explore generalized random walks in inhomogeneous InAs. We adopt the Monte Carlo method because it can handle arbitrary inhomogeneous patterns more than analytical models [13]. It can be extended to study the influence of high magnetic field [2, 3]
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