Abstract
In this paper, the growth process of silicon nitride films by ion beam enhanced deposition (IBED) is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The effects of the incident angles, energies of the bombarded ions and the interaction potentials on the composition of the films are discussed. The successive and alternate deposition process of silicon and implantation of nitrogen ions have been applied to simulate the actual continuous and synchronous process of IBED. The relationship between the calculated composition of the films and the ion/atom arrival ratio of implanted nitrogen ions to deposited silicon atoms has been established. The composition profile obtained by computer simulation is in good agreement with the experimental results.
Published Version
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