Abstract
We have analyzed spin relaxation behavior of various II–VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semiclassical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakonov–Perel mechanism and Elliot–Yafet mechanism are dominant for spin relaxation in II–VI semiconductors. Variation in spin relaxation length with external field has been analyzed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II–VI semiconductors are compared at an external field of 1 kV/cm to understand the predominant factors affecting spin dephasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.
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