Abstract
Monte Carlo calculations based on a continuous-slowing-down-approximation (CSDA) model have been carried out to study the backscattered electron image formation of a 54.6° tapered etched step registration mark in silicon. It is found that the energy signal gives slightly better contrast and greater average slope than the number signal. The constrast increases with step depth and is very close to its maximum value of 1.4 when the step depth is increased to 40% of the Bethe range of the primary beam. Additional step depth will degrade the signal shape. A universal curve of the average signal slope as a function of the normalized horizontal mark transition is also presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
