Abstract
Due to the fundamental role played by the interaction electron-matter in scanning electron microscopy (Electron Beam Induced Current -EBIC- in silicon case), a Monte Carlo calculation model of this interaction applied in silicon nanostructure is presented in the present paper. After a brief introduction to scattering process, our model procedure is described in which electron trajectories in the sample, penetration range (in depth and in spread), backscattered and secondary electron yields (the total electron yield) for nanostructure of silicon are calculated. The variation of this parameters with angle of incidence and impact energy have been studied. The validation of our model is performed by means of comparison with results which been reported by various authors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
