Monte Carlo simulation of InGaAs/AlGaAs/GaAs real-space transfer transistors

Abstract

Three-terminal devices based on real-space transfer (RST) of heated electrons across heterointerfaces, are promising for applications at microwave frequencies. Recently, a real-space transfer transistor (RSTT) similar to the charge injection transistor (CHINT), but with a pseudomorphic InGaAs/AlGaAs/GaAs material system and a collector-up structure has been demonstrated, exhibiting a 60 GHz gain-bandwidth product. The authors analyse the RSTT of Hueschen and coworkers using a self-consistent ensemble Monte Carlo technique. In particular, they focus on the location of RST with respect to the source-to-collector distance. They also propose an RSTT structure with an additional 'gate' electrode for response to changes in the heater voltage.