Abstract
Reflection high energy electron diffraction (RHEED) intensity oscillations were observed during molecular beam epitaxy (MBE) growth of Ge on Si(111) surface. At 250 °C the oscillations continue up to 6 monolayers. The intensity of the reflected beam is calculated by solving the one-dimensional Schrödinger equation. Monte-Carlo simulation was used for the growth simulation in order to investigate fundamental behaviours of reflectivity change during the Stranski-Krastanov growth of Ge on the Si(111) surface at 250 °C.
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