Abstract
A kinetic lattice Monte Carlo model is used to study the Ga droplets self-propelled motion along GaAs(111)A and (111)B surfaces during the initial stage of high-temperature annealing. An estimation of the droplet velocity, running along (111)A and (111)B surfaces, in a wide temperature range, is carried out. The mechanism of small Ga drops movement during high-temperature annealing is suggested. Different directions of droplets motion and the morphology of drop-crystal interface on (111)A and (111)B substrates are determined by a difference in the etching rate of (111)A and (111)B facets by liquid gallium. It is shown that metal droplets can cause step bunching.
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