Abstract
The transport of minority electrons in p-type In0.53Ga0.47As has been investigated for 1017 and 5×1017 cm−3 doping levels. Using Monte Carlo methods and including inelastic electron-hole (e-h) scattering, it is found that the mean electron velocity for fields below 4 kV/cm is smaller when e-h scattering is included than when it is absent. The mean velocities above 4 kV/cm are higher when e-h scattering is included and reach a peak at 5 kV/cm. The study reveals that the principal contribution of the e-h scattering is a more efficient channel of electron energy relaxation, with the consequence of a significantly reduced transfer of carriers to the upper valleys for fields below 6 kV/cm.
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