Abstract
Publisher Summary Recent progress, combined with a strong need for handling high-speed information processing, has led to increased interest in high-speed devices. This has led to much attention being focused on III-V compound semiconductors, because these materials possess suitable material parameters for high-frequency device operation. Some of the most fundamental parameters are the carrier transport properties in a high electric field. This chapter surveys recent experimental work on minority electron transport properties assuming hot-electron conditions. This work uses optical measurements such as the time-of-flight method and time-integrated and time-resolved photoluminescence. The chapter discusses the data obtained on drift velocity, electron temperature, energy loss rate, and relaxation processes. It presents the calculated results by a Monte Carlo simulation, including electron-hole interaction, and compares these results with the experimental ones.
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