Abstract
The transport of minority electrons in silicon has been investigated using an ensemble Monte Carlo approach at room temperature with electron-hole scattering rates which take into account the ellipsoidal nature of the conduction band valleys. Mobility calculations showed quantitative agreement with experimental values at an acceptor concentration of 4.5×1016 cm−3 while qualitative agreement with the electron-hole drag effect was observed at 3.8×1018 cm−3. Transient calculations showed the electron-hole interactions decrease electron energy, reduce steady-state velocity, and decrease the transfer rate of electrons to the cold valleys.
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