Monte Carlo simulations of low energy electrons in silicon

Abstract

The electron transport in silicon at low and very low energy (10 eV–2 keV) is investigated with a Monte Carlo code. The elastic scattering with nuclei is described by Mott's model of partial waves, whereas the inelastic collisions with electrons are described by the complex dielectric function theory. The code has been validated by means of comparison with electron emission yields (EEY) and energy loss spectra experimentally measured in ultrahigh vacuum on an Ar-etched sample. Electron emission yields, practical ranges, and ionizing doses are presented for electrons in silicon down to 10 eV.