Abstract
The microwave performance potential of Si/Si1—xGex pseudomorphic MODFETs is compared to that of the latest In0.3Ga0.7As pseudomorphic HEMTs, using simulations based on transient Monte Carlo calculations and accounting for realistic device parasitics. The potential cut-off frequency of the MODFETs approach half that of the HEMTs, corresponding to the ratio of their channel velocities. However, the maximum frequency of oscillation advantages of the HEMT are sharply eroded when realistic parasitics are considered.
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