Abstract
Monolithic optical receiver OEICs have been successfully fabricated on 2 diameter InP substrates by integrating an InGaAs pin photodetector with a simple InAlAs/InGaAs heterojunction MESFET (HFET) structure. Transimpedance receivers based on 1.5 μm gate length FETs exhibited 3.5 GHz bandwidth and 19.9pA/√(Hz) averaged noise current. Circuit functional yield as high as 67% has been achieved.
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