Abstract
AbstractPlanar IMPATT diodes have been fabricated for W‐band operation on high‐resistivity silicon substrates. The active layers are grown by silicon molecular beam epitaxy. The diodes are monolithically integrated in a coplanar disc resonator. Good DC characteristics have been achieved. Oscillations have been detected at a frequency of 76 GHz with a continuous wave output power of about 1 mW.
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