Abstract
A novel monolithically integrated silicon-on-insulator (SOI) CMOS avalanche photodiode photoreceiver is presented. The photoreceiver consists of a high gain (>30), low voltage (<20 V) Geiger-mode avalanche photodiode, operated below breakdown in avalanche mode, monolithically integrated with a transimpedance amplifier (TZ) in a 1.5 µm hybrid bulk/SOI CMOS process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
