Abstract
Large-area Geiger-mode avalanche photodiodes (GMAPs) that are designed to be compatible with a 1.5μm CMOS and silicon-on-insulator (SOI) CMOS process are presented here as candidate detectors for use in optoelectronic integrated circuits (OEICs). The photodetectors have 250μm and 500μm diameter active areas with 20um virtual guard ring overlaps. The GMAPs have a breakdown voltage of -30V and will be biased below breakdown in avalanche mode. The diodes' junction capacitances at 5V reverse bias are 11.66pF and 41.71pF respectively and 4.99pF and 17.95pF respectively at 27V reverse bias. The 250μm photodiode has a calculated bandwidth of 454MHz when biased at -5V while the 500μm diode has a calculated bandwidth of 142MHz when biased at -5V calculated using small-signal equivalent circuits for the devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
