Monolithic Wilkinson power divider on CMOS grade silicon with a polyimide interface layer for antenna distribution networks

Abstract

Using an optimized finite ground coplanar waveguide layout on a CMOS grade silicon wafer with a 20 /spl mu/m thick polyimide interface layer and embedded passives, a Wilkinson power divider is built. The measured characteristics show an insertion loss of only 0.57 dB at 12.5 GHz and better than 15 dB return loss and isolation.