Abstract
A comparison of SPST (single pole single throw) Switch topologies is presented. A 3 MESFET's monolithic GaAs switch was designed, for 2 GHz operation, fabricated and tested in 3 different bias conditions. It is shown that a floating configuration presents on-state lower insertion losses (/spl sim/1.7 dB). However, the off-state isolation has the same order of magnitude in all three bias conditions (typically 50 dB). Finally, several resonant topologies were studied and a new topology is proposed to increase the off-state isolation without degrading the on-state insertion losses. The advantages and drawbacks of resonant topologies over non-resonant configurations are also discussed taking into account technology constraints and operation frequency.
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