Monolithic silicon pixel detectors in SOI technology

Abstract

This paper describes a monolithic silicon pixel detector for ionizing radiation manufactured using the Silicon On Insulator (SOI) technology. In this novel device, the sensor is implemented in a high resistive SOI bottom wafer while the associated CMOS read-out circuits are built in a SOI device layer. Preliminary measurements of simple test detectors are presented. They prove that the detector is working properly showing the typical sensitivity of a fully depleted Silicon detector.