Abstract
We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAS or InP-based material systems with application at wavelength of 0.82-0.87 µm and 1.3-1.55µm, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.