Monolithic Integration of 1.3-μm Photodetectors and Waveguide Modulators on GaAs

Abstract

Optoelectronic transceivers are critical components for many high-performance lightwave communication systems. In the case of a 1.3-μm analog fiber-optic link employing external modulation of a cw optical source, a transceiver module consists of an integrated-optic modulator, a photodetector, and transmit/receive electronic control circuitry. GaAs is a promising substrate material for pursuing monolithic optoelectronic transceiver integration because of its mature electronics technology and its ability to support high-performance 1.3-μm electro-optic waveguide modulators and photodetectors [1,2]. Toward this end, monolithic integration of GaAs waveguide modulators with MESFET drive electronics has already been demonstrated [3]; however, photodetector integration with active waveguide devices has not been previously reported. This paper reports for the first time the integration of an optical waveguide modulator and a 1.3-μm photodetector on a common GaAs substrate, thereby demonstrating the feasibility of monolithic optoelectronic transceiver integration.