Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-µm-gate High Electron Mobility Transistors for High-Speed ICs

Abstract

Monolithic integration technology for resonant tunneling diodes (RTDs), Schottky barrier diodes (SBDs), and 0.1-µm-gate high electron mobility transistors (HEMTs) was developed. The integration process was investigated to overcome the difficulty in fabricating both RTDs with a mesa height of 530 nm and HEMTs with a gate length of 0.1 µm. The HEMT and SBD structures were grown by metalorganic chemical vapor deposition (MOCVD) on a 2-inch InP substrate. The RTD structure was regrown by molecular beam epitaxy (MBE) on the top layer grown by MOCVD. The characteristics of the fabricated devices showed good uniformity. An analog-to-digital converter and a selector circuit fabricated with these devices operated properly. The presented integration technology is a promising way to provide novel circuits with RTDs, SBDs and 0.1-µm-gate HEMTs.