Abstract
We demonstrate a monolithic integration of lateral-current-injection (LCI)-type membrane-based distributed-feedback (DFB) lasers and p-i-n-photodiodes (PDs) using a butt-jointed built-in (BJB) structure bonded on a Si substrate using benzocyclobutene. The BJB structure to be integrated to the membrane optical devices was prepared by organometallic vapor-phase epitaxy. A threshold current of 280 μA was obtained under a room-temperature continuous-wave condition by adopting a strongly index-coupled DFB laser with a surface grating structure and a λ/4-shift region. A low dark current of 0.8 nA was obtained with the p-i-n-PD at a bias voltage of –1 V, and its photocurrent property coincided with the light output property of the membrane DFB laser.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Selected Topics in Quantum Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
