Abstract
The aim of this paper is to demonstrate, for the first time, the viability of the monolithic integration of low voltage components, such as n and p channel MOSFETs, onto a planar vertical MOS controlled power device. This approach paves the way for realising a monolithic intelligent power chip with enhanced performance and reliability with respect to on-chip temperature, over-current and over-voltage protection circuitry. The detailed simulation results indicate no parasitic effects, both on the low voltage and power devices.
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