Monolithic integration of high voltage driver circuits and MEMS actuators by ASIC-like postprocess

K Takahashi,H Fujita,H Toshiyoshi,K Suzuki,H Funaki,H.N Kwon,M Mita

doi:10.1109/sensor.2005.1496444

Monolithic integration of high voltage driver circuits and MEMS actuators by ASIC-like postprocess

K Takahashi, H Fujita + Show 5 more

https://doi.org/10.1109/sensor.2005.1496444

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Publication Date: Jun 5, 2005

Citations: 8

Affiliation: Toshiba (Japan), Japan Aerospace Exploration Agency

#Micro Electro Mechanical Systems Actuators #Micro Electro Mechanical Systems + Show 8 more

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Abstract

In this paper, we report monolithic integration of MEMS (micro electro mechanical systems) actuators and high-voltage driver circuits into a silicon chip. Driver circuits of up to 40 V were prepared on an 8-/spl mu/m-thick SOI (silicon-on-insulator) wafer by the DMOS (double-diffused metal oxide semiconductor) processes, after which MEMS electrostatic actuators were integrated into an identical SOI layer by post-processing using DRIE (deep reactive ion etching). This technique opens up a new way of high-voltage ASIC (application specific integrated circuit) for MEMS designer. As a prototype application model, we have developed microlens optical scanners and other elementary MEMS electrostatic actuators with multi-channel driver circuits.

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