Abstract
The monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodiode has been achieved successfully by using one step liquid phase epitaxial growth. Only a single laser beam is emitted vertically from the substrate through the nearby 45° reflector. The highest output power achieved is 22 mW and the threshold current density is 1.92 kA/cm2. The ratio between photocurrent of the detector and the output power of laser diode is 0.32 μA/mW for the type I device and 1 μA/mW for the type II device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
