Abstract
The monolithic integration of N-channel metal-oxide-semiconductor (NMOS) driver circuits in silicon thin films onto a lead lanthanum zirconate titanate (PLZT) substrate is reported. Two integration methods are compared. Both methods result in NMOS transistors that exhibit electrical properties that are close to those of transistors fabricated in bulk silicon. The characteristics of PLZT modulators driven by thin-film transistors are also similar to those of bulk PLZT modulators. These techniques promise new spatial light modulators of high complexity and performance that good-quality silicon and bulk PLZT can offer.
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