Abstract
The NAND, NOR, AND and OR logic gate circuits are fabricated by monolithic integrated E/D mode MIS-HEMTs. Then the NOR and NAND based data flip-flop (DFF) structure are realized on the same wafer. For the above logic circuits, the driver voltage is up to 9 V. The experimental results fit with the expected logical truth table, which successfully achieved the logical judgement function. It also proves the potential of MIS-HEMT in the production of large input voltage, high-frequency logic circuits.
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