Monolayer to bilayer transition in reflection high-energy electron diffraction intensity oscillations during Si(001) molecular beam epitaxy

Abstract

We report the observation of a thermally driven monolayer to bilayer transition in the period of reflection high-energy electron diffraction oscillations during molecular beam epitaxy on Si(001). This behavior is reproduced in a Monte Carlo growth simulation, from which we infer the origin of the transition results from the competition between incorporation and diffusion kinetics.