Abstract

We propose a monolayer actively tunable dual-frequency switch in the terahertz (THz) range based on photosensitive silicon (PSi) metamaterial. The designed unit cell consists of hollow cross-shaped slots and four L-shaped slots made of a perfect electric conductor (PEC), with PSi embedded in both the cross-shaped and four L-shaped slots of identical dimensions. The PEC serves as the dielectric substrate. By varying the intensity of the pump beam to adjust the conductivity of the PSi, tuning of the transmittance at the resonant frequencies of the entire structure is achieved, enabling the switch to function in both ON and OFF states. Under vertical incidence of THz waves in the range of 1 THz to 3 THz, in the absence of pump beam, the PSi is in an insulating state with a conductivity of approximately 1 S/m. The proposed terahertz dual-frequency switch is in the ON state, with transmittances of 97.0% at the first resonance frequency (f1=1.736THz) and 98.3% at the second resonance frequency (f2=2.176THz), and group delays of 4.397 ps and 2.540 ps, respectively. When the pump beam intensity is 294.6 μj/cm2, the PSi is in a metallic state with a conductivity of approximately 1 × 105 S/m. The switch is in the OFF state, with zero transmittance in the range of 1 THz to 3 THz and a group delay of 0.327 ps. The calculated modulation degrees of amplitude at f1 and f2 for this terahertz dual-frequency switch are both 100%, demonstrating a high-performance switch. The two resonant frequencies f1 and f2 of the terahertz dual-frequency switch are generated by weakly coupled superposition between the embedded cross-shaped and four L-shaped PSi resonators (CSPR and FLSPR), exhibiting polarization-insensitive characteristics under vertical incidence of THz waves. We believe that this compact structure of terahertz metamaterial dual-frequency switch holds great application prospects in terahertz filtering, slow light devices, terahertz modulation, and the future 6G communication field.

Full Text
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