Abstract
Melting and crystallization scenario of amorphous silicon (a-Si) thin films have been investigated using in situ time-resolved optical reflection and transmission measurements. The explosive crystallization phenomenon is observed using a single-mode continuous wave He–Ne probe laser for thickness of 50 nm and 90 nm a-Si thin films upon 25 ns pulse duration of XeF excimer laser irradiation, respectively. The explosive crystallization phenomenon is easier to observe in the large thickness of a-Si thin films, a sample with pure a-Si microstructure and under longer pulse duration of excimer laser irradiation by time-resolved optical reflection and transmission measurements.
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